该职位来源于猎聘
- Responsibilities:Develop and optimize SiC MOSFET device architecture and processes for high voltage applications.
- Integrate device design with foundry process capabilities from EPI to back-metal, ensuring manufacturability, yield and reliability.
- Work with foundry partners to define SiC specific unit process (implant, anneal, oxidation, gate dielectric, metallization, etc.)Evaluate electrical characteristics (Ron, Vth, BV, Qg, etc.) and identify root causes to improve device performance.
- Identify and resolve yield, performance, and reliability issues through data analysis.
- Interface with customers for technical discussion and product improvement feedback.
- Document development results and report progress to cross-functional teams.
- Contribute to development of new process technologies and materials for advanced SiC devices.