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Responsibilities:
- Responsible for selecting SiC/IGBT chips that match the power module design, including evaluating on electrical, process, and reliability related performance…
- Responsible for review of power chip design, work with supplier on defining key parameters and leading the process control to lower early failures
- Responsible for chip level verification test definition to find suitable chips for power module application
- Continuously optimizing existing processes with chip suppliers, to improve chip performance/reliability and yield
- Responsible for chip related failure analysis at development phase and support power module level failure analysis
Requirements:
- Master or above degree in semiconductor physics, microelectronics, material or related majors.
- 5+ years of experience in SiC MOSFET/IGBT/FRD chip design, full-cycle chip development and mass production experience are preferred, particularly in automotive applications.
- Deep know-how on SiC MOSFET and IGBT chip structures and manufacture process.
- Familiarity with state-of-the-art SiC MOSFET chip technology, including planar and trench designs. Work experience in fab operations is preferred
- Willing to work in a multi-cultural team and have good communication skills
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